Novel MgZnO-based spintronic materials and devices.

This Phase I STTR project addresses the development of novel Zinc Oxide-based spintronic devices. The spintronic devices will find widespread application in civilian and military markets offering new generation of transistors, lasers and integrated magnetic sensors. The objective of the Phase I effort is to explore novel doping schemes to achieve room temperature ferromagnetism in ZnMgO materials doped with magnetic ions and co-doped with transition metals. SVT Associates will be utilizing innovative approaches using modulation-doped p-type heterostructures for designing, modeling and optimization of novel spintronic structures. SVT Associates will work closely with Prof. S. J. Pearton's group at University of Florida on growth and characterization of spintronic heterostructures. Semiconductor spintronic devices lead to the potential for new classes of ultra-low power high-speed memory, logic and photonic devices such as spin-polarized emitters with enhanced performance.