High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N
Award amount
$599,997Program and phase
SBIR · Phase IIAward year
2004Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2003-11-26
- Contract end date
- 2005-12-01
- UEI
- MLVQMLJLC139
- Solicitation number
- Not reported
- Topic code
- E2.04
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Ultra-Wideband Transceiver for Integrated Communication and Relative Navigation
- Silicon Digital Propulsion System
- High Impulse Nanoparticulate-Based Gel Propellants
- Embedded TCP Agents for Near-Earth Communications
- Radiation Hard High Performance Optoelectronic Devices
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation