SBIR/STTR Research Award

High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award identifier 1939a756743e755498f5f6d20a0ff1e06d2ec4f7118bbdf01620950a4379dd06Awarding agency National Aeronautics and Space Administration

Award amount

$599,997

Program and phase

SBIR · Phase II

Award year

2004

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
SVT ASSOCIATES INC
Proposal award date
2003-11-26
Contract end date
2005-12-01
UEI
MLVQMLJLC139
Solicitation number
Not reported
Topic code
E2.04

Research abstract

Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary missions to Venus and Mercury. The key electronic components for these applications include 1) an instrumentation amplifier to be used in conjunction with different probes and transducers, and 2) a power amplifier for driving motors and actuators. We propose to develop AlGaN-based electronics grown on low-defect substrates for operations at temperatures > 450?C and pressures > 100 atmospheres.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

National Aeronautics and Space Administration

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