Very High Temperature (400+ C), High Power Density Silicon Carbide (SiC) Power

79139S In power electronic conversion systems(PCS), wide band gap devices, such as silicon carbide (SiC), offer the promise of vastly exceeding the constraining restrictions of silicon by offering higher blocking voltages, higher operating temperatures, higher frequency, and lower switching losses compared to other, more conventional devices. These performance increases all directly translate to higher efficiencies and reliabilities at smaller sizes, which ultimately corresponds to significant savings in PCS costs and maintenance. This project will develop innovative high temperature packaging, control, and circuit design strategies, in order to achieve these improvements. Phase I will utilize SiC power switch technology in conjunction with high temperature active and passive control circuitry. The use of SiC also should improve converter electrical efficiencies and voltage switching capability. Phase I will culminate in the delivery of a fully functional low power prototype capable of greater than 400¿C junction temperature operation for the power switches. The prototype will utilize control electronics capable of 300¿C operation at the baseplate, will operate at greater than 94% efficiency, and will illustrate 10¿ miniaturization over present state-of-the-art silicon based power converters. Commercial Applications and other Benefits as described by the awardee: By improving electrical efficiencies through the use of SiC electronics, and by implementing the technology in a wide range of power converter applications, billions of dollars in wasted energy could be saved. The reduced size and volume of power modules also should lead to applications where reduced weight is a factor, such as for mass market electric vehicles.