SBIR/STTR Research Award

Radiation Tolerant Non Volatile Memory with Hard By Design Techniques

Award identifier 48bc241d6c771e2c7278505f7582906d9c152a52ca621f5af65ded3fb88ce028Awarding agency National Aeronautics and Space Administration

Award amount

$599,999

Program and phase

SBIR · Phase II

Award year

2004

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
NxGen Electronics, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
VW7MAGRHD8H1
Solicitation number
Not reported
Topic code
Not reported

Research abstract

NxGen Electronics Inc proposes to research and rapidly develop radiation hardened non volatile memory microelectronics, based on commercial ferroelectric technolgy. These FRAMs exhibit excellent radiation performance in the memory cell but are extrememly sensitive in the peripheral circuitry. We will apply hard-by-design techniques, with the support of Celis Semiconductor, to develop a rad hard version for space and military applications.In Phase II this design will be fabricated on one of Ramtron's licensees wafer fab. To address the high density needs, NxGen Electronics will design several MCM and stacked memory configurations using advanced packaging technology.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

11 SBIR/STTR records share this UEI (2003–2013). Reported award amounts total $3,812,357. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Aeronautics and Space Administration, Department of Defense

Agency intelligence

National Aeronautics and Space Administration

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