InAs/GaInSb Superlattice Detector Development for > 20-Micron Infrared Focal Plane 02-003E

InAs/GaInSb type II superlattices show great promise for use in Very Very Long Wavelength Infrared (VVLWIR, for wavelength > 20 um) detectors. System analysis indicates early detection of space borne vehicles is more easily achieved in this infraredregime. This III-V compound compares very favorably with the current HgCdTe technology in anticipated performance, manufacturability and operating costs (e.g. cryogenic cooling). Despite significant progress at shorter wavelengths (around 10 um wavelength)high performance detectors have yet to be demonstrated at these extremely long wavelengths, due to challenges posted by the material growth process. We propose to implement several monitoring techniques for tight control of the process parameters. Wewill also investigate processing steps for device fabrication. The Phase I work will lead to better understanding of the material growth and detector performance. This material system has detection capability from 2-30 um. Within the infrared rangevarious products can be developed including thermal and medical imaging, and pollution monitoring.