NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

IF THE NEW THIN-FILM PROTOTYPE FERROELECTRIC MEMORIES ARE TO BE NECCESSFULLY INTEGRATED ONTO GAAS CIRCUITRY, IT WILL BE NECESSARY TO DEVELOP RAPID THERMAL PROCESSING TECHNIQUES TO PROTECT THE GAAS JUNCTIONS (A NORMAL PZT ANNEAL IS 75 MIN AT 650-750 DEG C, WHICH IS INTOLERABLE FOR GAAS DEVICES). THE PRESENT PROPOSAL IS FOR JOINT WORK WITH MCDONNEL-DOUGLAS (CHOSEN BECAUSE THEIR J-FET DEVICES HAVE BETTER LEAKAGE CURRENTS AND REQUIRE NO GATE ANNEAL, IN COMPARISON WITH MESFETS). IN ADDITION TO RAPID THERMAL PROCESSING STUDIES, THE PROPOSED WORK INCLUDES BETTER CHARACTERIZATION OF FE-ON-GAAS MEMORY DEVICES (PARTICULARLY WITH REGARD TO C-V DATA) THAN HAS BEEN GIVEN TO DATE, AND THE TEST OF ONE NEW MATERIAL (BISMUTH TITANATE) AS AN ALTERNATIVE TO PZT FOR THE ACTIVE MEMORY MATERIAL.