SBIR Phase I: Ultrafast spintronic devices based on magnetic tunnel junctions using magnesium oxide (MgO) tunnel barriers

This SBIR Phase I project is to investigate magnetic layer compositions, structures, and geometries to develop spintronic devices using magnesium oxide based magnetic tunnel junctions that operate in the deep sub nanosecond time regime. The research will address the problem of slow magnetic response from both an experimental and theoretical prospective. A software package will be developed to facilitate conceptual understanding of the magnetization dynamics. The ultrafast magnetic materials and structures that will be developed will increase the performance of magnetic memory and magnetic sensors thus benefiting applications in data storage, magnetic sensing and non-destructive evaluation.