Innovative Manufacturing Processes

"Silicon carbide is attractive for high temperature, high power, high voltage and high frequency devices because of its extreme properties. However, there are still processing issues that must be resolved if these applications are to ever be fullyrealized. One of the major obstacles to SiC device production is the occurance of micropipe defects in bulk single crystals and homoepitaxial films. This program will demonstrate that microwave plasma assisted chemical vapor deposition (MPACVD)is asuperior manufacturing process, to those currently used, for the production of high quality, defect free, homoepitaxial SiC films. The program will involve depositing homoepitaxial SiC films from SiH4, C3H8, H2 precursors using a 2.45 GHz tubular MPACVDsystem. A step flow growth process will be utilized, in the presence of atomic hydrogen generated by dissociation of H2 in the microwave plasma, which will minimize the formation of defects in the growing films. This approach for depositing SiChomoepitaxial films has not been previously reported in the literature. Parametric studies will be conducted to optimize the growth conditions. Films will be thoroughly characterized by x-ray diffraction, scanning electron microscopy, and microfocus Ramanspectroscopy. Silicon carbide is being developed for high power high voltage switching applications, high temperature electronics, and high power microwave applications in the 1 - 10 GHz range. Power electronic