Collimated Array of Neutral Atoms by Lithography of Silicon (CANALS)

Physical Sciences Inc. (PSI) proposes to demonstrate fabrication and performance of a high-flux-density (1018 atoms/m2s) collimated atomic-beam source of 133Cs using scalable production methods, such as photolithography with silicon substrates and glass-Si bonding techniques. The collimated array of neutral atoms by lithography of silicon (CANALS) source will provide atomic beams with narrow velocity distributions (~1 m/s) in the direction transverse to their propagation axis, as well as be contained within a ~100 µL vapor cell that also encompasses a Cs oven and region for laser probing. Narrow transverse velocity distributions are achieved entirely by the geometric design of an array of microchannels integrated into the vapor cell and require no lasers for cooling, an aspect that greatly reduces power requirements. These low transverse temperatures offer considerable narrowing of atomic transitions within power-broadened linewidths, allowing most atoms within the CANALS source to be manipulated by the incident lasers. Partnering with PSI, the University of Oklahoma will conduct laser spectroscopy on a fabricated atomic-beam-source prototype for assessing its performance and assist in incorporating the source with phase-coherent Raman lasers for advancing quantum gyroscope technologies. ???????