Low Temperature Microwave Plasma-assisted Jet Vapor Deposition

JET VAPOR DEPOSITION (JVD) INCORPORATING MICROWAVE SOURCES AND PLASMA TREATMENT OF THE SUBSTRATE IS A PROMISING METHOD FOR DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE. THE TECHNIQUE OFFERS CONTROLLABLE RATES OF DEPOSITION, LOW DEPOSITION TEMPERATURE AND HIGH POTENTIAL THROUGHPUT. THE PATENTED JVD PROCESS ALSO GENERATES A MINIMAL QUANTITY OF TOXIC WASTE PRODUCTS, IN CONTRAST TO MANY CVD PROCESSES. STUDY OF THE PLASMA MECHANISMS INVOLVED WILL PINPOINT THE FACTORS THAT GIVE RISE TO HIGH QUALITY DIELECTRIC FILMS HAVING ELECTRONICALLY GOOD INTERFACES WITH SILICON. THE STABILITY OF JVD FILMS AND THEIR INTERFACES UNDER THERMAL PROCESSING WILL BE EVALUATED. IF FAVORABLE, THE JVD DIELECTRICS WILL BE INTEGRATED INTO ADVANCED, HIGH DENSITY SILICON DEVICE PROCESSING. JVD DIELECTRICS MAY ALSO BE APPLIED IN SEMICONDUCTOR TECHNOLOGIES THAT DO NOT USE HIGH TEMPERATURES (>700 DEGREES C) ENCOUNTERED IN SILICON PROCESSING, SUCH AS THE III-V AND II-VI COMPOUNDS. JVD ALSO HAS POTENTIAL IN THE DEPOSITION OF METAL LAYERS FOR DEVICE FABRICATION DUE TO ITS ECONOMICAL USE OF SOURCE MATERIAL AND HIGH THROUGHPUT.