SBIR/STTR Research Award
Synthesis and Characterization of Wide Direct Bandgap Material BeCn2
Award amount
$50,000Program and phase
SBIR · Phase IAward year
1992Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- ICET, INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- JF7VN7UHFLM5
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The use of thin film diamond in semiconductor electronic devices has been hampered by the lack of suitable substrates for growth of single crystal diamond films. Recently, it has been proposed that a new hypothetical semiconductor material, BeCN2, could be expected to exhibit close lattice matching to the structure of diamond. While BeCN2 might itself be an important semiconductor material, it might also be able to support the growth of single crystal diamond films. Under this project, an indepth literature study is to be performed to assess the best methods and conditions for the synthesis of BeCN2. Preliminary experiments of BeCN2 formation using two techniques are planned.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- UTI Reduction in Neurogenic Bladder.
- A Topical Nasal Gel as an Invisible Shield Against Viral and Bacterial Pathogens
- UTI Reduction in Neurogenic Bladder
- Self-Healing Shape Memory Polymer Coatings for Chemical/Biological Protective Clothing
- KIDNEY STONE INHIBITORS
Research funding history
41 SBIR/STTR records share this UEI (1991–2020). Reported award amounts total $7,675,180. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Health and Human Services, Department of Defense, Department of Energy, Environmental Protection Agency, National Science Foundation