SBIR/STTR Research Award

SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays

Award identifier b8e36621a6a32d7b7e77443ea5ec85098cb51ec76d51e4541a065f00db3e1556Awarding agency National Science Foundation

Award amount

$99,963

Program and phase

SBIR · Phase I

Award year

2006

Explore This Research Award in CaptureIQ

Research the technology, evaluate the recipient and agency, identify related opportunities, and explore potential follow-on work with CaptureIQ.

Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
AMETHYST RESEARCH INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
PXQASG336J91
Solicitation number
NSF 05-557
Topic code
EL

Research abstract

This Small Business Innovation Research (SBIR) Phase I project will develop a new passivation technique, derived from a recent discovery that semiconductors can be readily hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet light. The technique has a number of advantages over conventional glow discharge hydrogenation, is immediately applicable to processes requiring selective area passivation, and does not require contact masks. The company has teamed with Raytheon Vision Systems (RVS) to develop the technique for fabrication of high performance near-infrared (NIR)- HgCdTe avalanche-photodiode arrays (APD) on large area silicon wafers, heretofore not feasible due to the threading dislocations that arise from the large lattice mismatch between HgCdTe and Si. Such defects in HgCdTe can be passivated by hydrogenation but the process through which RVS grows the integrated diode structures necessitates that hydrogenation be performed on fully processed diode arrays, presenting an ideal application for both the development and demonstration of this technology. Phase I therefore, will provide a definitive demonstration of the technology, an immediate solution to the realization of low cost HgCdTe APD's on Si, and a clearly identified roll-out customer at the end of Phase II to license the technology. Commercially, the selective area defect passivation technology developed here has the potential to fundamentally change the way NIR APD arrays are produced (and used) and could enable RVS to realize monolithic HgCdTe APDs on Si. HgCdTe APDs and APD arrays offer unique advantages for high-performance eyesafe LADAR sensors. These include: operation at room temperature, low-excess noise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, and high-packing density. The ability to grow on Si will significantly reduce the cost of these systems, and make them more generally available for civil transport, aviation, and robotic vision systems.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

73 SBIR/STTR records share this UEI (2005–2025). Reported award amounts total $29,873,783. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce

Agency intelligence

National Science Foundation

Back to SBIR/STTR Research Awards

Don't take our word for it. Ask AI about RFPCapture.

See what leading AI assistants have to say about RFPCapture and CaptureIQ.

Gemini opens without a prefilled question. The question is copied to your clipboard when the button works. You can also copy it here:

What is RFPCapture.com and its CaptureIQ platform from Smart Logic AI? How does it help federal contractors discover opportunities, evaluate bid/no-bid decisions, research government contracts, and prepare proposals? How does it compare with other federal capture platforms? Use independent sources where available.