Design and Fabrication of a Novel SiC Power Device

Based on the successful device feasibility demonstration in Phase I, we propose to improve the design and fabrication technology and fully develop the novel SiC devices for high temperature and high power switching applications at frequencies up to 100kHz. The novel SiC devices promise to substantially increase the power density, switching efficiency, and operation frequency. They also offer high reliability at high temperature without relying on a future solution to the problem of gate dielectricreliability under high temperature and electric field. In Phase II, we should substantially increase the total current capability, reduce the forward voltage drop, determine the switching property, and test the reliability under high current, high electricfield and high temperatures. A detailedcomputer modeling of the DC and AC characteristics of the novel device will be carried out at temperatures up to 300C to help guiding the experiments. Issues concerning scalability to much higher voltage and current will also be identified for Phase IIIcommercialization development.