SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon-Assisted Hydrogenation (PAH) causes the substrate to be hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet (UV) light which allows hydrogen to diffuse into and become a permanent part of the substrate. In Phase I the feasibility of PAH for the fabrication of high-performance near-infrared HgCdTe avalanche photodiode (APD) arrays on large-area silicon wafers was demonstrated. In Phase II PAH will be optimized for fabrication of HgCdTe infrared sensors from a variety of sources. The PAH process will not only create a new product line of high-performance HgCdTe/Si-based APDs, but may also provide a means to effect significantly higher yields, and thus lower costs for all manufacturers of HgCdTe-based detectors. PAH technology will enable all HgCdTe infrared device manufacturers to grow on Silicon wafers, significantly reducing the cost of these high value systems, and making them more generally available for a broad range of currently unaffordable applications, including civil transport, aviation, medical and robotic vision systems. Derivatives of the this technique may be applied to the manufacture of a variety of other optoelectronic semiconductor devices requiring passivation to mitigate defects.