SBIR/STTR Research Award

SCHOTTKY BARRIER PHOTOELECTRODES WITH VARIABLE BARRIER HGHT

Award identifier a963be837cb7db8761c5c7e7f375b59906dfa67c2d3aa0d766347db05b5090c1Awarding agency Department of Defense · Navy

Award amount

$492,000

Program and phase

SBIR · Phase II

Award year

1984

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
EIC LABORATORIES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
QXCJLSJ7NPC3
Solicitation number
Not reported
Topic code
Not reported

Research abstract

THE OBJECTIVE OF THIS RESEARCH IS TO INVESTIGATE THE PROPERTIES OF SCHOTTKY BARRIERS FORMED BETWEEN SEMICONDUCTORS AND ION INSERTION COMPOUNDS HAVING CONTINUOUSLY VARIABLE STOICHIOMETRIES AND WORK FUNCTIONS. IN PHASE I, THE DIODE P-SI/MXWO3 (M=H, LI, 0<X<1) WILL BE STUDIED, SINCE THE REACTION MX-^WO3 ^M+ + ^E- COVERS THE FULL RANGE OF POTENTIALS REPRESENTED BY THE P-SI BAND GAP. IN PARTICULAR, CONCEPTS OF FERMI LEVEL PINNING WILL BE TESTED. MXWO3 COMPOSITIONS WITH LOW WORK FUNCTIONS (HIGH X) WILL BE USED TO MAXIMIZE THE DIODE BARRIER HEIGHTS. THESE, IN TURN, WILL BE USED IN PHOTO-ELECTRO-CHEMICAL CELLS AND ASSOLID STAT DIODES TO PRODUCE PHOTOVOLTAIC CONVERTERS OF HIGH PHOTOVOLTAGE AND ENERGY CONVERSION EFFICIENCY.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

392 SBIR/STTR records share this UEI (1983–2025). Reported award amounts total $89,797,365. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Environmental Protection Agency

Agency intelligence

Department of Defense

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