SBIR/STTR Research Award

Heterogeneous VCSEL Array Integration with Silicon Substrate

Award identifier ca8e6af31e472a49cb68f59059a90e8a88c2b73d7d3216b59d729e235269c4c5Awarding agency Department of Defense · Missile Defense Agency

Award amount

$65,000

Program and phase

SBIR · Phase I

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
N.P. PHOTONICS, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
L1XGLKME9BC1
Solicitation number
Not reported
Topic code
Not reported

Research abstract

We propose to heterogeneously integrate a large array (64x64) of vertical-cavity surface-emitting lasers (VCSELs) with a silicon substrate. This work takes advantage of the recently developed applique technique that quasi-monolithically integrates VCSELs with foundry processed CMOS chips. This development work will concentrate on obtaining yields of 100% for VCSELs in the array while maintaining the compatibility of the applique process to the heterogeneous integration with CMOS drive circuitry.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

123 SBIR/STTR records share this UEI (1998–2025). Reported award amounts total $46,434,512. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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