SBIR/STTR Research Award
MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics
Award amount
$99,959Program and phase
SBIR · Phase IAward year
1997Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- MLVQMLJLC139
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
High frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both gallium arsenide (GaAs) and indium phosphide (InP) have impeded technology to control and stabilize MIS structures on these promising materials systems. SVT Associates proposes to develop under Phase I a method to form reproducible sulfur passivated MIS structures on InP with low interface state densities by molecular beam epitaxy (MBE) of CdS films. Under Phase II, processes and hardware for sulfur passivation of high power mm wave InP MISFETs will be designed and tested.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation