SBIR/STTR Research Award

Amorphous NEA Silicon Photocathodes-A Robust RF Gun Electron Source

Award identifier e49fd476a6919cefb7c8c53cc7e586f262dfe62efc6e54b5f59901e793b19957Awarding agency Department of Energy

Award amount

$650,000

Program and phase

SBIR · Phase II

Award year

2007

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Saxet Surface Science
Proposal award date
Not reported
Contract end date
Not reported
UEI
YBNKV4KVRVM4
Solicitation number
DE-FG01-05ER05-28
Topic code
38

Research abstract

Energy recovery linacs and other CW accelerators mandate the use of radio frequency (RF) photoinjectors to generate the low emittance, high current, high-peak-charge electrons used in collisions with hadron beams, and for electron cooling of hadron beams. However, RF guns using thermionic cathodes are not able to supply the high-phase-space densities required. Amorphous silicon shows great promise as a negative-electron-affinity (NEA), visible-wavelength photocathode suitable for RF gun systems. The advantages of amorphous silicon include a high degree of immunity to charged particle flux, low thermal emittance, bandgap tunability when grown as a germanium alloy, and low production cost. Phase I involved measurements on amorphous silicon to determine activation procedure, photoresponse, and neutral and charged particle interactions. Amorphous silicon surface preparation as well as in vacuo treatment was established to achieve negative electron affinity performance. Photoresponse was measured as a function of wavelength and lifetime. In Phase II, amorphous silicon photoemitter quality will be improved by using RF plasma-enhanced chemical vapor deposition (PECVD). Characteristics relevant to RF gun operation, including emission angle and current density, will be measured. Other features important for RF gun use, including substrate diffusion blocking, will be optimized. The increased quality will lead to improvements in electron diffusion length and thereby the yield. Commercial Applications and Other Benefits as described by the awardee: Amorphous, silicon-based RF photoinjectors should find use in energy recovery linacs, free electron lasers, and other applications that require the lowest possible source emittance. Reliable, low-cost, photocathode driven RF gun systems could become ready replacements for the diode and triode guns used on medical accelerators (typically S band 5-20 MeV) for the production of clinical photon beams and therapy electron beams.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

14 SBIR/STTR records share this UEI (2006–2014). Reported award amounts total $5,420,000. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense

Agency intelligence

Department of Energy

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