SBIR/STTR Research Award

SBIR Phase I: Novel Cold Cathode E-Beam Sources for Advancing Semiconductor Manufacturing

Award identifier 88a05832a7aa8142d137fd4778bf58974e53d9bb0cac260317736aff20fc37e8Awarding agency National Science Foundation

Award amount

$305,000

Program and phase

SBIR · Phase I

Award year

2025

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
JULIA JEAN, LLC
Proposal award date
2025-03-26
Contract end date
2026-05-31
UEI
EMYZH3MUHNV5
Solicitation number
NSF 24-579
Topic code
S

Research abstract

The broader impact/commercial impacts of this Small Business Innovation Research (SBIR) Phase I project will be in developing new solutions for semiconductor chip manufacturing for artificial intelligence (AI). Mask writers are machines that are integral to the semiconductor industry, as these create the stencils (masks) that are sandwiched together to form advanced computer chips. The number and complexity of the masks required for these chips are increasing beyond the capacity of state-of-the-art machines. The company is developing a component device that has the potential to introduce disruptive change in the fundamental design of mask writers. The project will harness this technology to tackle manufacturing bottlenecks in mask production that are caused by the accelerating demand for advanced intensive AI applications. The work will lead to a more efficient solution for producing semiconductor chips faster and with high computational power. The project has the potential to effect a financial impact of greater than $20M annually after three years, and to kickstart entry of the fundamental technology into additional market segments. This Small Business Innovation Research (SBIR) Phase I project will lead to a wafer-scale process for creating controllable cold cathode electron sources that advance integrated circuit design and manufacturing. Semiconductor chip fabrication is achieved by performing photolithography through stencil masks that are themselves created using either laser- or electron-beam mask writers. The properties of these tools dictate spatial resolution, precision, and turnaround time. The multiple electron-beam (multi-beam) writer has achieved the smallest feature sizes, thus displacing the laser writer for artificial intelligence (AI) applications. The goal of this project is to help eliminate two significant bottlenecks that hinder production and advancement in multi-beam technology: (1) Beam quality and parallelization (reliability and yield)

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

4 SBIR/STTR records share this UEI (2022–2025). Reported award amounts total $875,773. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Commerce, Department of Defense, National Science Foundation

Agency intelligence

National Science Foundation

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