8 mm Diameter Solid State Photodetector at 532 nm

We propose to develop a high performance, solid state photodetector with 8 mm diameter. It will use a novel solid state microchannel plate incorporating a proprietary avalanche gain structure. In Phase I, the design concept will be validated experimentallyto prove feasibility and scalability. The Phase II activity will build, demonstrate and deliver the photodetector and transimpedance amplifier in a module occupying less than 1 cubic inch. The module at 0 degrees C will simultaneously achieve single-photonsensitivity at 532 nm, 10 bits of dynamic range, GHz bandwidth & pulse-pair resolution, 100% (ungated) duty cycle, and less than fW/Hz^1/2 noise-equivalent power at 40 dB of detector current gain. A typical TIA provides another 20 to 40 dB of current gainat 5 pA/Hz^1/2 (0.5 fA/Hz^1/2 equivalent input noise). The system NEP at 74 degrees C, operating uncooled, is projected to be below 1 fW/Hz^1/2. The proposed solid state detector technology is low voltage, rugged, and cannot be blinded.