SBIR/STTR Research Award

SBIR Phase II: Iptymer Low-k Dielectric Materials

Award identifier 658a0b7dbea8748a016f3fa8e6f0fed9c8025caabd7e69ff502d4c0ba437991dAwarding agency National Science Foundation

Award amount

$500,000

Program and phase

SBIR · Phase II

Award year

2005

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Nomadics, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
EK87N63LP4Y4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Innovative Research (SBIR) Phase II project will develop and introduce new low-dielectric constant polymers as a new dielectric material for the fabrication of interconnect systems in integrated circuits. The continuing drive for denser integrated circuits and faster interconnects requires the development of new interlayer dielectric materials. The proposed materials rely on newly defined, so called Iptymer molecular design concepts, to create intrinsic free volume within the material. This approach is distinctly different than the current methods under investigation that introduce extrinsic pores into a material to lower its dielectric constant. The standout thermal stability, mechanical strength, and processability of Iptymer materials will enable facile integration into semiconductor fabrication processes. The research objectives of the Phase II program will introduce and supply Iptymer materials into semiconductor fabrication process development programs. This effort builds on Phase I results that demonstrated scaled synthesis of key Iptymer monomers and polymers and validated the dielectric performance, mechanical strength and processability of Iptymer polymers. The Phase II program will demonstrate pilot production of Iptymer materials that possess a dielectric constant less than 2.0 and have superior mechanical and thermal integrity. In addition integration of Iptymers in semiconductor fabrication processes will be demonstrated. Commercially, the impact of reliable low-k dielectric materials is considerable. Higher bandwidth processing and communication for the same cost will be possible with improved materials. Present day microprocessors have a range of clock speeds determined from post-fabrication testing. Superior low- dielectric materials will not only increase the ultimate clock speeds, but will also improve the yield of the highest speed devices. Every country, economic group, and industry will benefit from such advances. The societal benefits realized through the extension of electronic tools into areas where their use is now impractical or not affordable will be tremendous. Widespread availability of computers throughout primary and secondary education will reap tremendous gains in education.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

92 SBIR/STTR records share this UEI (1995–2007). Reported award amounts total $25,070,260. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, Department of Energy, Department of Homeland Security, Department of Commerce

Agency intelligence

National Science Foundation

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