Ultra Thin Silicon (UTSi) Silicon-On-Sapphire EEPROM Cells for Embedded Memory On RFIC & Digital IC's

This document is an application for a Phase II SBIR on the development and characterization of radiation hardened and commercial non-volatile EEPROM memory base technology for embedded applications in Mixed Signal, RFIC and digital ASICs. PeregrineSemiconductor Corporation was awarded the Phase I SBIR for the evaluation and feasibility of the underlying EEPROM cell technology, specifically - demonstration and characterization of a radiation hardened EEPROM cell. The Phase I effort successfullydemonstrated that Peregrine's Plus CellT EEPROM built on UTSir CMOS meets all radiation hardness, reliability, endurance and retention requirements for satellite and commercial applications. It is the purpose of the Phase II effort to demonstrate that thiscell can be embedded into integrated circuits and pass the same set of requirements, and to increase the number of cells tested to ensure larger blocks of these cells meet the same performance criteria. Successful completion of this Phase II effort willenable satellite and commercial companies to be able to design EEPROM into virtually any IC they require. Peregrine Semiconductor therefore applies for this second phase SBIR, to fully develop and characterize the technology, bring it to manufacturinglevel and enable offering such embedded capability to space and commercial applications.