SBIR/STTR Research Award

SiGe Amplifier Technology for High Data Rate Digital Systems

Award identifier 9a84b7ccd05f48d39b99e3d6f53e22931995c8e5d041179a659d247125654335Awarding agency Department of Defense · Navy

Award amount

$400,000

Program and phase

STTR · Phase II

Award year

2001

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
HYPRES INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
Z3BBX7KX4WU5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

HYPRES, in collaboration with Rennselaer Polytechnic Institute (RPI), proposes to develop a system for amplifying low-level, high-speed digital signals from superconducting electronic components at cryogenic temperatures. This will beaccomplished using high-bandwidth low-noise amplifiers (LNAs) fabricated from silicon-germanium heterojunction bipolar transistors (SiGe HBTs), which can also operate at cryogenic temperatures. This will be demonstrated using a prototype superconductinganalog-to-digital converter (ADC) that generates 1 mV digital signals at speeds up to 3 Gigabits per second. The SiGe amplifier arrays will convert these signals to standard ECL logic levels compatible with conventional electronics. The SiGe LNAs and thesuperconducting ADC will be packaged onto the first stage ( at 65 K) and the second stage (at 4 K) of a commercial closed-cycle refrigerator (cryocooler), together with appropriate high-bandwidth links optimized for this cryogenic system.BENEFITS:Superconducting electronics based on rapid-single-flux-quantum (RSFQ) logic has beendemonstrated to have considerably higher performance, in terms of speed, bandwidth,and sensitivity, than any other integrated circuit technology. This isextremely attractive for a number of Navy applications, including high-resolutionanalog-to-digital converters (ADCs) and fast digital signal processing (DSP)elements for digital receivers for future software-radio communications systems.Since these superconducting circuits work only at cryogenic temperatures of 4-5 K,we must build a link to room temperature to take advantage of these superiorproperties. This is enabled by incorporating cooled SiGe HBT amplifiers at anintermediate temperature. By integrating these together on a compact commercialcryocooler without liquid cryogens, this can be developed into a complete reliableturnkey system where the cryogenics are invisible to the end user, thus enhancingacceptance in the defense and commercial wireless communications markets.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

255 SBIR/STTR records share this UEI (1985–2025). Reported award amounts total $91,527,586. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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