Development of a New Method for Fabricating SiC-On-Insulator Compliant Substrate

SURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY USING SUPERLATTICE PERIOD ENABLES ONE TO USE THIS SYSTEM OVER A WAVELENGTH RANGE OF 4-24 UM. A REDUCTION IN SHOT NOISE USING DOUBLE-PERIODIC SUPERLATTICE WILL ENABLE TO REALIZE A LARGE SIGNAL TO NOISE RATIO. MOREOVER, THE SCHEME EMPLOYED TO REDUCE SHOT NOISE WILL RESULT IN AN ENHANCED ABSORPTION COEFFICIENT MAKING POSSIBLE THE REALIZATION OF A DETECTOR WITH A LARGE SIGNAL TO NOISE RATIO.