SBIR/STTR Research Award
QUANTUM WELL LASER DIODES FOR MID-IR (2-5 M) WAVELENGTHS
Award amount
$64,591Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- MLVQMLJLC139
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
RESEARCHERS ARE FABRICATING (A1GAINASSB) QUANTUM WELL LASER STRUCTURES FOR 2-5 M IR APPLICATIONS. THIS MATERIAL SYSTEM HAS DESIRED PROPERTIES AND IS COMPATIBLE WITH III-V DEVICE PROCESSING TECHNOLOGY. THE LASER DIODES ARE GROWN BY MOLECULAR BEAM EPITAXY METHOD. RESEARCHERS USE IN-SITU MONITORING TECHNIQUES FOR TIGHT MATERIAL PARAMETER CONTROL, AND USE DOPANTS WHICH MAY LEAD TO IMPROVED PERFORMANCE. THE WORK IS BASED ON EXTENSIVE EXPERIENCE IN THESE MATERIALS. MATERIALS ARE THOROUGHLY CHARACTERIZED AND THE GROWTH CONDITION OPTIMIZED. DEVICE MODELING WILL LEAD TO IMPROVED UNDERSTANDING AND ADVANCED STRUCTURES FOR ENHANCED PERFORMANCE.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation