Low Phase Noise, Wideband, Antimonide, DHBT Oscillator MMICs for Millimeter Wave C4I Applications

Innovative low phase noise, wideband oscillator MMICs are proposed for high performance millimeter wave applications. Double heterostructure bipolar transistor (DHBT) deposited by MBE with carbon doped GaAsSb base layers and InP emitter and collector layers will be fabricated and tested under Phase I. Monte Carlo and modified Gummel Soon models will be developed to predict and characterize 1/f noise and device nonlinearities which contribute to phase noise in the DHBTs. Active inductance circuits based on the InP/GaAsSb/InP DHBTs will be designed and simulated. Oscillator MMICs employing the antimonide DHBT devices will be designed and simulated for innovative broadband operation over 40 64 GHz using the active inductor approach. The novel monolithic circuits will target wideband tuning and stability with high Q values ( >1000), low phase noise (< 90 dBc/Hz at 100 kHz offset), broad tuning range (24 GHz), and output power independence with tuning. The technical goals are not achievable with current technology employing hybrid solutions or intrinsically tuned oscillators.