AlGaN Solar Blind UV Focal Plane Arrays (UVFPA)

This proposal addresses the significant need for high power and high temperature transistors. A major innovation is needed to produce power devices which can operate at high temperatures (400 ¿C), withstand high voltages (> 500 V) and operate at high current levels without special cooling. SVT Associates proposes to meet this need with a heterojunction bipolar junction transistor (HBT) fabricated from Aluminum Gallium Nitride (AlGaN). The basic electrical and thermal properties of Nitride materials are ideal for this application. The quality of existing P type GaN, however, is insufficient to make low leakage, low on resistance, high breakdown voltage GaN PN junctions. We propose to demonstrate improved quality P type GaN for these applications using an unique doping source in atomic nitrogen molecular beam epitaxy (MBE). If successful, the process will be used in Phase II to fabricate 1) GaN PN rectifiers and 2) AlGaN Heterojunction Bipolar transistors (HBT) for high power applications.