SBIR Phase I: Large Diameter ZnS Single Crystal Substrates for II-VI-based UV-Detectors
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- FAIRFIELD CRYSTAL TECHNOLOGY, LLC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- L8NGYMXQN9H6
- Solicitation number
- NSF 05-557
- Topic code
- EL
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-quality, low-cost GaN single crystal substrates for high-power devices
- High-quality, low-cost GaN single crystal substrates for high-power devices
- SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors
- SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors
- SBIR Phase I: Large Diameter CdS Single Crystal Substrates for II-VI-based Light Emitters and Displays
Research funding history
10 SBIR/STTR records share this UEI (2005–2015). Reported award amounts total $2,208,687. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: National Science Foundation, Department of Energy