Subnanosecond Ultra-Low Power Consumption 3-Dimensional NbN RAM

Due to a number of physical restrictions, Random Access Memory based on silicon can not reach the performance level of superconductive devices. HYPRES proposes the two-phase development of a subnanosecond low-power memory. The principal problems in the development of such a memory have been: an exclusive focus on ac-driven latching logic, which requires very high value of AC control currents and comparatively high power dissipation level. Recent development of the Rapid Single-Flux-Quantum (RSFQ) logic circuits have allowed a new approach to implementation of some critical components of the memory chips. This results in extremely low power dissipation (- 10 20 J per gate). The proposed memory is nonvolatile, that is data is not destroyed when the power supply is turned off. This property allows one to design a three-dimensional memory matrix. HYPRES is going to demonstrate multi-chip stacked 16 KBit three-dimensional subnanosecond access time multi-chip RAM working at 10 K temperature. The proposed above Random Access Memory can be implemented in Josephson digital electronics with focal array planes, digital signal processing, image processing, etc., as a storage of data with quick access.