Scalable Composite AlScN/AlYN Epitaxy for High-Temperature Electronics (SCALE)

Physical Sciences Inc. (PSI) and the research group of Prof. Xiuling Li of the University of Texas at Austin (UT) will develop single crystalline epitaxial thin films and heterostructures of group III-IIIb-Nitride thin films (AlScN and AlYN) for electronic device applications scalable to 4-inch wafer diameters or larger. These AlScN and AlYN based electronics for excellent for high-temperature applications such as within aircraft engines, missiles, and hypersonic platforms. The PSI-UT team’s work will address the fundamental challenges of Metal-Organic Chemical Vapor Deposition (MOCVD) grown AlScN and AlYN to realize HEMT and ferroelectric devices. The program will result in a proof-of-principle AlScN and AlYN epitaxial thin films, their corresponding MOCVD recipes, as well as prototype HEMT and ferroelectric devices.