SBIR/STTR Research Award

A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

Award identifier 18d245d0be3b7f55f1315ca41f017fe7680cab2f003b5b54a9f277d06fae12afAwarding agency Department of Defense · Army

Award amount

$120,000

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
United Silicon Carbide, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
E1ZMN21UWJK5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach can lead to (i) substantially higher heat rejection, (ii) drasticallysimplified packaging technology, and (iii) greatly improved reliability for high temperature operations. In Phase I, we propose to study the feasibility by designing a package that would clearly indicate the outstanding features of the proposed approach.The key component of the package will be designed and experimentally demonstrated. Computer modeling will be carried out to assist the design of the key component. The fabricated key component will be characterized and tested under different temperatures.The feasibility of the proposed approach will be confirmed by demonstrating an improvement to the thermal conductivity by 20X in comparison to similarly commercially available package components. In Phase II, we shall optimize the computer model to assistthe design of the package, optimize the thermal conductivity of the key packaging component, fabricate the component based on optimization information obtained from the computer modeling, test and evaluate the component, drastically increase the thermalconductivity of the key component by 50X, fabricate multiple packages capable of handling power dissipations up to 1,500W/cm2, fabricate SiC power rectifiers and package them and evaluate the electrical and thermal performance of the packaged rectifiers atpackage case temperatures of 150C to 200C or higher. Because of the simplicity of the proposed packaging technology, if demonstrated successfully, it can be applied equally well to package the lower cost Si power IGBTs and diodes. A novel packagingtechnology ideally suited for packaging high power density SiC devices for high temperature and high reliability applications including the Army, the Air Force, and the Navy high power motor control and power supply systems as well as numerous commercialapplications

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

56 SBIR/STTR records share this UEI (1999–2018). Reported award amounts total $19,121,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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