Superconducting Microwave Lumped Element Using Low- Dielectric Layer

High Temperature Superconductive (HTS) components have advanced to the point where they have started to offer significant advantages, especially for future air or space borne communication systems. So far, most of the microwave HTS demonstration components have been in the form of hybrid distributed circuits. Major further application advances are believed to be possible through the eventual use of HTS lumped elements. In this SBIR, we propose to demonstrate the feasibility of the first HTS tri-layer structure using a low-e dielectric and operating at microwave frequencies. The proposed lump LC test structure is expected to demonstrate high quality growth of dielectric layer and a subsequent HTS layer on top of a tapered lower HTS film, while maintaining good microwave surface resistance in both HTS layers. Such a configuration is essential to a number of microwave circuit configurations, including lumped capacitors and cross-overs. If successful, it will form the basis for more advanced circuit processing technique that eventually will also involve the patterning of the dielectric and the forming of interconnections between the two HTS layers in the subsequent Phase II. Ultimately, this technology may permit the integration of lumped HTS circuits with conventional MMIC circuits. OPTION TASK: $20,000