SBIR/STTR Research Award

Phase II Active Low-Voltage Thin-Film Lithium Niobate Electro-Optic Modulator

Award identifier c39ddbb37952288ecaf8a304b47b3ab7fb60c226187a3fd785c9bac77b4c6e99Awarding agency Department of Defense · Navy

Award amount

$999,900

Program and phase

SBIR · Phase II

Award year

2025

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
Critical Frequency Design, LLC
Proposal award date
2024-10-22
Contract end date
2026-04-23
UEI
E2DHYME6B1T6
Solicitation number
23.1
Topic code
N231-010

Research abstract

Microwave photonics (MWP) offers many advantages for analog signal processing: operation across large frequency ranges with wide bandwidths, low-loss signal transport via optical fiber with excellent immunity to electromagnetic interference, low return loss and high isolation with switches and circulators, among many others. But the conversion of an electrical signal to an optical signal has historically been so poor, it has kept MWP from being implemented. An electro-optic modulator must have strong conversion efficiency, low insertion loss, a flat frequency response, and a high optical power threshold to enable the many possible applications of MWP systems.In response to this need, Critical Frequency Design (CFD) proposes the development of an electro-optic modulator with low half-wave voltage (Vpi) using thin-film lithium niobate (TFLN), coupled with a high-power optical amplifier integrated in a small, durable package. By leveraging the latest breakthroughs in chip-scale optical amplifiers and TFLN processing, combined with innovative packaging methods, CFD will produce an active modulator with sufficiently high performance to enable a balanced intensity modulation direct detection (IMDD) link with 3 dB noise figure (NF) and 116 dB*Hz2/3 spur-free dynamic range (SFDR).Two main parameters contribute significantly to the RF performance of an IMDD link: modulator half-wave voltage (Vpi) and optical power into the modulator. NF improves with lower Vpi and higher optical power, while SFDR depends more strongly on optical power but can be reduced when Vpi is low enough that the overall link gain is large and input thermal noise becomes the dominant noise term. To achieve the desired RF metrics of 3 dB NF and 116 dB*Hz2/3 SFDR, a modulator with 0.5 V Vpi and 30 dBm optical input power is needed. This project will produce a small form factor active modulator capable of maintaining such high performance in harsh environments, which will in turn enable a wide range of applications for RF and microwave systems.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

13 SBIR/STTR records share this UEI (2020–2025). Reported award amounts total $10,360,551. Reported amounts are not federal obligations.

Phases: Phase II, Phase I

Agencies: Department of Defense

Agency intelligence

Department of Defense

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