STTR Phase I: Epitaxial nanostructured AlGaN for high efficiency UV emitters

This Small Business Technology Transfer Research Phase I project is directed toward the development of a high-efficiency and high-power AlGaN-based semiconductor light emitting diode (LED), operating at 300nm or shorter, for a wide range of applications including air and water purification, polymer curing, fluorescent spectroscopy, secure optical communications and biological and chemical hazard monitoring. These devices will be developed using molecular beam epitaxy (MBE) for low-cost and high-yield production on large-diameter substrates. Aluminum Gallium Nitride UltraViolet optical sources offer the possibility of compact, light-weight, low-cost, low-power-consumption optoelectronic systems that would enable a new generation of systems for applications that include biodetection, non-line-of-sight covert communications, sterilization, and air and water purification. If a low-cost and long-life LEDs with UV light emission below 280 nm is developed the application to water purification alone could represent a very large market. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).