SBIR/STTR Research Award

High Voltage Package Encapsulants

Award identifier 0a3b26655c2f8b33a4a353456b78f5283aba6c8d0dcec857fa71221aacbf61f7Awarding agency Department of Defense · Defense Microelectronics Activity

Award amount

$1,315,213

Program and phase

SBIR · Phase II

Award year

2024

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Award details

Awarding agency
Department of Defense
Branch
Defense Microelectronics Activity
Recipient company
TEXAS RESEARCH INSTITUTE , AUSTIN, INC.
Proposal award date
2024-09-30
Contract end date
2026-10-13
UEI
LM1NWMDNNQ18
Solicitation number
23.1
Topic code
DMEA231-003

Research abstract

With significant strides being made on wide bandgap (WBG) semiconductor devices for high-power electronics, there is a concurrent need for packaging encapsulants with reliable performance in a rigorous operational environment. The WBG power devices are set to be fielded in electric vehicles, aircrafts, spacecrafts, and energy producing systems where working conditions can see temperatures in the range of 200–400 °C. Based on silicon carbide or gallium nitride, these newer semiconductors with higher power densities can be produced in smaller sizes, operate at higher voltages, and provide greater efficiency in switching frequencies than conventional silicon. Commercial encapsulants, which are based on either epoxy or silicone material, fall short in their thermal properties for use in WBG power electronics. The role of an encapsulant is to electrically insulate and protect the electronic assembly from moisture, corrosion, dirt, and mechanical disturbances. Additionally, operating under higher voltages (>1kV) will enhance localized electric fields and increase the activity of partial discharges, or the localized breakdown of the insulation system by small sparks of current. It is thus essential that the encapsulating material exhibits high thermal stability, and towards this end, TRI Austin will continue the development and characterization of cyanate ester resin formulations for next-generation power devices. Materials developed in Phase I will be optimized for processing and targeted properties and the down-selected candidates will undergo extensive testing to establish long-term performance for a successful prototype.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

416 SBIR/STTR records share this UEI (1983–2025). Reported award amounts total $140,672,616. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Transportation, Department of Commerce, National Science Foundation, Department of Energy

Agency intelligence

Department of Defense

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