SBIR/STTR Research Award
Next-Gen RF Transistor Models for Ultra-Efficient RFICs
Award amount
$286,787Program and phase
SBIR · Phase IAward year
2024Award details
- Awarding agency
- Department of Commerce
- Branch
- National Institute of Standards and Technology – CHIPS
- Recipient company
- RECON RF, INC.
- Proposal award date
- 2024-09-17
- Contract end date
- 2025-04-01
- UEI
- ZNRMSSM3QSZ7
- Solicitation number
- 2024-SBIR-CHIPS-01
- Topic code
- 4
Research abstract
“Next-Gen RF Transistor Models for Ultra-Eicient RFICs” project focuses on
developing advanced transistor models to improve the design of high-efficiency Radio Frequency
Integrated Circuit (RFIC) power amplifiers. These enhanced models will be applied to create a suite of
commercial RFIC power amplifier microelectronic products, serving high-volume markets in wireless
5G/6G, commercial space, and U.S. Department of Defense applications. Accurate measurement and
modeling - key elements of NIST’s mission - are essential for enhancing RFIC design precision and
semiconductor manufacturing reliability, supporting U.S. microelectronics production.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Advanced Semiconductor Production of Next-Gen X-Band SSPAs for USAF Radar, EW, & Comms
- Ultra-Low-Noise Cryogenic HEMT Amplifiers for HEP Applications
- Ultra-Efficient X-Band Solid State Power Amplifier for RF Accelerators
- Ultra-Efficient P/UHF Band Power Amplifiers
- Ultra-Efficient RFIC Power Amplifiers for Phased-Array-Communications
Research funding history
14 SBIR/STTR records share this UEI (2019–2025). Reported award amounts total $9,224,520. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: National Aeronautics and Space Administration, Department of Energy, Department of Defense, National Science Foundation, Department of Commerce