Advanced Semiconductor Production of Next-Gen X-Band SSPAs for USAF Radar, EW, & Comms

This project develops an advanced, thermally enhanced, radiation-tolerant X-band GaN MMIC Solid-State Power Amplifier (SSPA), specifically targeting Air Force phased-array radar and electronic warfare applications. Building directly upon prior successful Phase-1 validation, originally designed for commercial marine and aviation weather radar (8.5–10 GHz, 80W CW, 50% efficiency), the adapted design increases output power (>100 W CW), efficiency (>70%), and frequency range (9–11 GHz). The co-designed solution integrates high-efficiency GaN semiconductor technology with innovative silver-diamond composite heat-spreader packaging, significantly enhancing thermal management (50% mass reduction) and reliability (2-3x increase in MTTF). Risk is substantially mitigated due to demonstrated Phase-1 feasibility results and established manufacturing processes, positioning the project at TRL 4, advancing toward TRL 5. This effort strategically transitions semiconductor fabrication domestically to a commercially viable GaN foundry, aligning with both Air Force and broader CHIPS Act objectives.