Gigahertz SEM-based Nanoprobes: Enabling Metrology, Failure Analysis, and Device Characterization for Next-Generation Semiconductor Node Manufacturing

This Small Business Innovation Research project aims to develop new ultra high-speed nanoprobes. This new and critically needed technology will enhance the ability for semiconductor failure analysis engineers to locate and analyze "soft" electrical faults, which occur in the most advanced semiconductors and are otherwise difficult to detect. The emergence of next-generation gate-all-around transistor technology and ground-breaking backside power distribution chip architecture will significantly increase the reliance upon nanoprobing to isolate electrical defects as now-routine laser-based failure analysis techniques become obsolete. Current nanoprober technology is limited to DC or megahertz frequency probing, which is orders of magnitude slower than the current chip clock speeds of about six gigahertz and restricts the ability of semiconductor failure analysis engineers to locate and analyze high frequency electrical faults. A successful project outcome will greatly enhance nanoprobing by developing novel nanoprobes that deploy gigahertz frequency signals. The innovation inherent in this project is the application of ultra high-speed signal technology to a probe with a nanometer-sized tip. This new apparatus will be contained inside a scanning electron microscope nanoprober, which allows imaging of the nanoprobes and placement of them on individual nanometer-scale chip interconnects and transistors for electrical measurement. This project will benefit failure analysis engineers in the U.S. semiconductor industry and enable development and manufacture of leading-edge chips.