SBIR/STTR Research Award

Low Cost Imaging in the MM Wave Region Using Plasma Waves in High Moblity Transistor

Award identifier 8546e6e45482d879da4075b83802853600ae77a9ffe1c09110ee4cb7cabf1dd8Awarding agency Department of Defense · Office for Chemical and Biological Defense

Award amount

$657,148

Program and phase

STTR · Phase II

Award year

2024

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Award details

Awarding agency
Department of Defense
Branch
Office for Chemical and Biological Defense
Recipient company
BRIMROSE TECHNOLOGY CORP
Proposal award date
2024-09-14
Contract end date
2026-11-15
UEI
WKDYRE26KLT7
Solicitation number
22.B
Topic code
CBD22B-T001

Research abstract

We propose to develop low-cost, high sensitivity high electron mobility transistor-based W-band millimeter wave focal plane array/camera based on mature ternary III-V epitaxial materials of InGaAs/InAlAs on top of InP substrate. The plasma-wave detector uses well established mature technology of high electron mobility transistors which allows future integration and reduces cost. The detectors are uncooled since no drain-source voltage is applied, hence there is no dark current present, promoting low power operation.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

56 SBIR/STTR records share this UEI (2010–2025). Reported award amounts total $23,415,654. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Department of Health and Human Services

Agency intelligence

Department of Defense

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