SBIR/STTR Research Award

Advanced Manufacturing of Low Ron?Diamond-based Power Transistors

Award identifier cccad0d7dd69a1cf43dbe4a8168f53cfd5404bd4abb5061a4d400b7ebf9b567dAwarding agency Department of Energy

Award amount

$1,150,000

Program and phase

SBIR · Phase II

Award year

2024

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
ADVENT DIAMOND, INC.
Proposal award date
2024-09-10
Contract end date
2026-09-09
UEI
YSZAQCKK7DN4
Solicitation number
DE-FOA-0003279
Topic code
C56-20a

Research abstract

In this project, Advent Diamond is developing relevant materials and manufacturing processes to commercialize all-diamond power transistors. These are expected to be the first to market of components based on semiconducting diamond. By focusing both on device design as well as manufacturing methods and materials, this project will enable the near-term commercialization of a new transistor with temperature ratings beyond what is commercially available, and will also lay the groundwork for components with breakthrough power and other specifications such as 10kV transistors. Thus, this project will directly lead to four product lines: (1) High temperature channel optimized semiconducting diamond transistors; (2) High temperature all-diamond power module which will pair diamond transistors and diodes (3) High power, high speed high mobility field effect transistor (HFET); and, (4) vertical high voltage/high power diamond MOSFET for breakthrough specifications (such as >10kV switching) relevant to the most ambitious power electronics systems, such as solid state transformers for smart grids. The high temperature compatibility of diamond power systems could unlock a range of other energy advancements, from a gas-station like EV charging experience to electric aircraft. The objectives and outcomes of this project are: (i) optimize the design of and fabricate prototypes of p-channel diamond transistors which build upon successful Phase I results, including an ultra-low contact resistance contact developed in Phase I to prepare for their commercialization (ii) demonstrate vertical MOSFETs with a first of its kind design for diamond, with high blocking voltage and low on resistance at high current; (iii) fabrication procedures for selective (patterned) doped diamond deposition which enable breakthrough designs of diamond-based technologies for wide-ranging applications; and (iv) fabrication procedures for manufacturing diamond compatible dielectric on diamond. Results of this experimental project will be leveraged in the near-term for commercialization of channel optimized diamond MOSFETS, and follow-on products with larger production runs and more ambitious specifications that make full use of diamond's potential.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

15 SBIR/STTR records share this UEI (2018–2025). Reported award amounts total $8,382,242. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, National Aeronautics and Space Administration, Department of Defense, National Science Foundation, Department of Commerce

Agency intelligence

Department of Energy

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