Advanced Manufacturing of Low Ron Diamond-based Power Transistors

The problem being addressed in this application is the lack of materials and manufacturing techniques available to fabricate next- generation semiconducting electronic components in the United States. Specifically, this project advances diamond-based power components, which can bring greater efficiency, reliability, and resilience to the power grid. This project focuses on manufacturing methods and material fabrication techniques to solve key issues related to producing next-generation high power electronic components. The specific problem being addressed in this project is to reduce the on-resistance of diamond-based transistors, in order to increase their efficiency. The approach taken in Phase I is to research manufacturing method to deposit a new type of dielectric on diamond. This dielectric can increase the mobility of the charge carriers in the diamond compared to devices made with other dielectrics such as aluminum oxide. In addition, the interface between this novel dielectric and diamond can be used to engineer the dopant activation, which also benefits the on-resistance. Finally, in this project a new way to pattern doped diamond will be developed, which will enable the manufacturing of more advanced device structures. Implementing a smart grid, which will enable real-time digital grid management and power distribution, is estimated to bring about $2 trillion in economic benefits and will help enable stable, resilient, and more efficient power grid. This project develops key components for this and other applications for power electronics, such as electric vehicles, spacecraft power, defense, and industry. The serviceable available market for this application is >$5Bn.