DMEA241-003 Ultra-high Voltage Reliability Test System

Systems such as power electronics, pulsed power, and grid tied electronics, benefit from high voltage, high current, and high temperature operability of power semiconductor devices. Traditionally, power semiconductors have been fabricated using Silicon (Si). Current state-of-the-art (SotA) Si power devices can readily achieve voltages up to 6.5 kV, currents up to 750 A, and operation at temperatures up to 125oC. However, Si devices are fast approaching fundamental material limitations for key metrics such as blocking voltage and high temperature operation. In recent years, wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have seen widespread research, development, and commercial adoption. Due to inherent material properties, wide bandgap materials drastically improve upon device blocking voltage and/or temperature operation. Between GaN and SiC, SiC is more suited to high voltage and high temperature operation. Presently, devices fabricated using SiC can readily achieve voltage ratings of up to 27 kV and operate at temperatures up to 200oC. As wide bandgap power devices continue to advance in voltage and temperature ratings, we must also enhance our test infrastructure and power device packaging. Standard TO packaging limits system designers from fully utilizing the operating specifications of SiC devices. Similarly, test systems built for traditional Si power devices fall short in evaluating ultra-high voltage devices, as they typically accommodate only standard modules. We have identified the need for a new system capable of performing reliability tests with maximum voltages up to 40 kV, control voltages from -50 V to +50 V, maximum temperature control from 25oC to 200oC, and relative humidity control from 15% to 85%.  This system will be essential for the current and future testing of ultra-high voltage, wide bandgap power devices. Scientific Applications & Research Associates (SARA) is pleased to propose a Phase I feasibility study effort on a package-level reliability test system architecture for performing reliability and qualification tests on discrete wide-bandgap devices of the present and future. Methodologies for HTGB, HTRB, H3TRB, and ALT-HTRB tests will be specifically considered for MOSFETs, IGBTs, thyristors, and diodes in various packages to fill the need for reliability testing beyond what current systems offer. Such a system will provide a testing platform that far surpasses existing commercial options in its ability to evaluate the reliability of ultra-high voltage, wide bandgap and ultra-wide bandgap power devices well into the future.