SBIR/STTR Research Award

Neutron Dose Tolerant Solid-State Photomultiplier for Nuclear Imaging

Award identifier 54499749807c1a80ef06b8c0cef57ea467202141333119ce364e6493deebacbcAwarding agency Department of Energy

Award amount

$1,099,996

Program and phase

SBIR · Phase II

Award year

2024

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
RADIATION MONITORING DEVICES, INC.
Proposal award date
2024-04-04
Contract end date
2026-04-03
UEI
SCKQA85YU4U4
Solicitation number
DE-FOA-0003184
Topic code
C51-20b

Research abstract

Neutron probes are a powerful tool in material science, and the Spallation Neutron Source at Oak Ridge National Laboratories is undergoing an upgrade to provide a high flux of neutrons on test samples to promote new discoveries. The higher intensity comes at a price of higher neutron and gamma-ray backgrounds that will damage equipment, specifically photodetectors, a critical component of science instruments. A technology that enables new instruments for discoveries in physics and material sciences is the silicon photomultiplier, yet this photodetector will be damaged rapidly within these high-intensity radiation fields. The project is to design a solid-state photomultiplier that will be significantly more tolerant to the gamma-ray and neutron backgrounds by replacing the silicon with a different semiconductor material. GaAs/AlGaAs diodes developed in this project, as well as commercial silicon photomultipliers (SiPM), were exposed to 108 and 109 n/cm2 in identical thermal neutron fields. While the SiPMs showed an increase in dark current, the GaAs/AlGaAs diodes showed no increase, demonstrating the feasibility of developing a rad-hard GaAs photomultiplier. To obtain the radiation tolerance, the GaAs diode is thin (less than 1 ?m thick), while to facilitate operation beyond the breakdown voltage, a triple mesa structure was utilized. Simulations showed a strong suppressing in the electrical field on the edges of the diode, while measurements indicate a strong (multiple orders of magnitude) suppression of leakage current in the triple mesa structure compared to a single mesa structure. To further enhance the performance of a photomultiplier (arrays of the GaAs diodes), the packing density of the diodes is improved by transitioning to a double mesa structure, where simulations show a viable electric field profile for Geiger-mode operation. Along with physics instrumentation, solid state photomultipliers are used for nuclear instruments in the medical fields and nuclear industry. The technology to be developed in the project will support applications where the detectors will be exposed to high radiation fields, such as those found in the nuclear industry, sciences, and space applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

930 SBIR/STTR records share this UEI (1983–2026). Reported award amounts total $346,950,619. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Homeland Security

Agency intelligence

Department of Energy

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