Widely Tunable III-V Based Epsilon-near-zero tunneling diodes for room-temperature infrared detectors and light sources

High performance infrared photodetectors and light sources that span infrared wavelengths from 2 to 14 microns and beyond are critical to DoD. At the longer wavelengths these devices demand stringent cooling requirements, which add size, weight, power consumption and cost. In this program we are developing tunnel diodes based on epsilon near zero (ENZ) metal-insulator-metal (MIM) rectenna structures, which have the potential of disruptive performance. In Phase I we have demonstrated III-V based ultrabroad band hyperbolic metamaterials with ultra-low losses, suitable for ENZ MIM rectennas. In Phase II we will demonstrate ENZ MIM based high-speed ultrasensitive detectors that operate at room temperature, low-power ultra-bright narrow-band emitters that operate with single stage thermoelectric coolers, and ultrafast actively tunable phase arrays. Integration of these technologies will also be pursued to produce infrared technology prototypes. The realization of any of these devices will be game changing. The program brings together a proven consortium that includes Amethyst Research who specialize in new III-V device development, the University of Oklahoma’s infrared group, Naval Research Laboratory, the Army Research Laboratory and supply chain stakeholders to ensure integration into the E/O III-V commercial supply chain and technology adoption and system integration by relevant industrial primes.