Radiation hardened Trench-Isolated Low-Gain Avalanche Diode (TI-LGAD)
Award amount
$199,999Program and phase
SBIR · Phase IAward year
2023Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- CACTUS MATERIALS, INC.
- Proposal award date
- 2023-07-10
- Contract end date
- 2024-07-09
- UEI
- SX7VM5R549M7
- Solicitation number
- DE-FOA-0002903
- Topic code
- C56-37a
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Radiation hardened double sided Low-Gain Avalanche Diode (LGAD) with small pixel readout for 5D tracking
- Novel heavy ion focal plane detectors
- Radiation hardened double sided Low-Gain Avalanche Diode (LGAD) with small pixel readout for 5D tracking
- Multi-stacked Aligned Wafer Bonding for Wide-bandwidth AR treated silicon optics
- A New Approach to Achieving High Granularity in Low-Gain Avalanche Detectors
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- SiC Low Gain Avalanche Diode (LGAD) for Minimum Ionization Particle (MIP) sensors
- Secondary Emission Detector Modules for High Energy Physics Experiments
- Optimization of the gain layer design for radiation hard LGAD based silicon detectors
- SiC Low Gain Avalanche Diode (LGAD) for Minimum Ionization Particle (MIP) sensors
Research funding history
14 SBIR/STTR records share this UEI (2018–2023). Reported award amounts total $5,904,879. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, National Aeronautics and Space Administration