SBIR/STTR Research Award
Low Temperature Homogeneous Epitaxy of 4H-SiC Using Novel Precursors
Award amount
$749,927Program and phase
STTR · Phase IIAward year
2022Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- STRUCTURED MATERIALS INDUSTRIES, INC.
- Proposal award date
- 2022-07-25
- Contract end date
- 2024-10-11
- UEI
- WMLSF59AE7E1
- Solicitation number
- 19.B
- Topic code
- AF19B-T015
Research abstract
Currently, the Silicon Carbide based power electronic market is at an inflexion point from which it is expected to grow at a faster rate – increasing from ~28% CAGR to ~40% CAGR and to do so on increasingly larger wafers – presently moving from 150mm to
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SiC Low Gain Avalanche Diode (LGAD) for Minimum Ionization Particle (MIP) sensors
- Optimal Radiation Tolerant High Intensity High Temperature Photovoltaics
- Large Area InGaN/GaN MQW p-i-n Avalanche Photodiode Cherenkov Radiation Detectors
- High Performance High Current CW polarized photocathodes for Electron Ion Colliders
- Innovative Equipment Large Single Crystal CdZnTe Production for Long-Wave Infrared Detector Arrays
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Tooling and Processing for Low Temperature Homogeneous Epitaxy of 4H-SiC Using Novel Precursors
- Optimized Substrate Orientation for 4H-SiC Epitaxy
Research funding history
177 SBIR/STTR records share this UEI (1992–2024). Reported award amounts total $45,517,958. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce, Department of Homeland Security