Tooling and Processing for Low Temperature Homogeneous Epitaxy of 4H-SiC Using Novel Precursors

Currently, Silicon Carbide based power electronic market is at inflexion and expected to grow at a faster rate from 28% CAGR to 40% CAGR. To meet the market demand, tools and processes to grow 4H-SiC device layers needs significant improvement. The device layers grown by chemical vapor deposition (CVD) method uses higher temperatures, and unoptimized chemistries. Such a growth process leads to low yield and longer process, time, and reduces the reactor lifetime by degrading graphite parts. Hence, there is need to develop a CVD process that can yield high quality device layers, improve tool life and with reduced process time. The temperature of the process can be reduced by using novel precursor gases that can yield growth rates higher than 20 um/hr at reduced temperatures of >100 C compared to conventional growth process while maintaining the same quality.