SBIR/STTR Research Award

A Radiation Hardened, Digitally Controlled, Phase-Shifted Full-Bridge Isolated DC-DC Converter

Award identifier e29f3b2e5799946e1958b025e5f657f5be2dd92e43dedefb424c3459b0db7280Awarding agency National Aeronautics and Space Administration

Award amount

$156,393

Program and phase

SBIR · Phase I

Award year

2022

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Alphacore, Inc.
Proposal award date
2022-07-14
Contract end date
2023-01-25
UEI
CXMPDDLFBCH3
Solicitation number
SBIR_22_P1
Topic code
Z1

Research abstract

Alphacore Inc. will develop a low-profile, lightweight, high efficiency, mixed-signal (analog/digital) controlled Isolated DC-DC converter that helps address NASArsquo;s demand for Innovative Ways to Transmit Power over Long Distances for Lunar and Mars Missions, including ldquo;applications of wide-bandgap electronics in direct current (DC)-to-DC isolating converters with wide-temperature, high-power-density, high-efficiency, power electronics and associated drivers for voltage regulationrdquo;.nbsp;The developed converter will have a reduced component count, enabling reduced failure modes, lower PCB area and it includes over voltage protection, fault tolerance, load monitoring, and allows control and status monitoring by a remote power system controller. This solution includes all controller circuitry and drivers integrated in a single CMOS ASIC chip, as well as the GaN-based DC-DC converterrsquo;s power stage.nbsp;Alphacorersquo;s converter will utilize CMOS based drivers and controllers for the GaN power stage. The driver and controller would be based on X-FABrsquo;s latest XT018 process, a 0.18 micro;m modular high-voltage SOI technology. It combines the benefit of conventional SOI wafers with Deep Trench Isolation (DTI), those of a state-of-the-art six metal layers 0.18 micro;m process, and localized partial SOI for unique high-voltage super-junction (SJ) power transistors. Unlike traditional high-voltage LDMOS devices from conventional bulk or SOI CMOS processes, the unique high-voltage SJ DMOS power transistors with VDS breakdown voltage of 100V, 140V and 200V offered in XT018 have reduced conduction loss (RDS) with the same silicon area, such that lower FOM (RDS‚àôQgd) is available for higher efficiency applications. The planar high-voltage SJ DMOS transistor also has significantly better radiation tolerance for both TID effects and SEE. In addition, the low-voltage CMOS devices (which we will use for the controller design) in this process are extremely radiation tolerant.nbsp;

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

155 SBIR/STTR records share this UEI (2013–2026). Reported award amounts total $63,784,604. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Department of Commerce

Agency intelligence

National Aeronautics and Space Administration

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