SBIR/STTR Research Award

Enabling Industry scalable GaN-based Technology for Heterogeneous Integration of RF power devices Via van der Waals 2D h BN Release layer

Award identifier 5754931675986b92b2cf86e57d3e99b489167af73b44627a00679ca320eeedceAwarding agency Department of Defense · Air Force

Award amount

$1,249,026

Program and phase

SBIR · Phase II – Direct to Phase II

Award year

2022

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
AGNITRON TECHNOLOGY, INC.
Proposal award date
2022-05-04
Contract end date
2024-02-09
UEI
NGDVGM4G1YM4
Solicitation number
X22.1
Topic code
AF221-DCSO1

Research abstract

Gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) continue to be the best solution for high power/high-frequency RF/microwave needs due to its high-power RF performances. However, GaN has presented difficulties of not being able to be

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

16 SBIR/STTR records share this UEI (2013–2024). Reported award amounts total $11,320,870. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy

Agency intelligence

Department of Defense

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