SBIR/STTR Research Award

Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics

Award identifier c96e12c9bb42a91550cd4e8e949ae69e6f4a0a004c67cdbcb519341f8cc9ea0bAwarding agency Department of Defense · Air Force

Award amount

$1,249,950

Program and phase

SBIR · Phase II – Direct to Phase II

Award year

2024

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
AGNITRON TECHNOLOGY, INC.
Proposal award date
2023-10-10
Contract end date
2026-01-10
UEI
NGDVGM4G1YM4
Solicitation number
22.4
Topic code
AF224-D029

Research abstract

Epitaxial growth of high quality Ga2O3 based epitaxial films on large area substrates is needed on the path to the commercialization of high-performance devices, including devices for next-generation microwave electronics. We propose to develop scalable p

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

16 SBIR/STTR records share this UEI (2013–2024). Reported award amounts total $11,320,870. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy

Agency intelligence

Department of Defense

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